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Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates

✍ Scribed by Kyono, Takashi; Hirayama, Hideki; Akita, Katsushi; Nakamura, Takao; Ishibashi, Koji


Book ID
121089442
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
865 KB
Volume
98
Category
Article
ISSN
0021-8979

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Injection current-dependent quantum effi
✍ Yang, Y. ;Cao, X. A. ;Yan, C. H. πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 315 KB

## Abstract We studied the nonthermal mechanism of quantum efficiency (QE) roll‐off in InGaN‐based multiple‐quantum‐well LEDs on sapphire and bulk GaN substrates with In content ranging from 1% to 28%. Both the efficiency evolution and peak energy shift appear to be strongly dependent on the In con