Effects of hydrostatic pressure and aluminum concentration on the conduction-electron g factor in GaAs-(Ga,Al)As quantum wells under in-plane magnetic fields
✍ Scribed by Reyes-Gómez, E.; Raigoza, N.; Oliveira, L.
- Book ID
- 111961026
- Publisher
- The American Physical Society
- Year
- 2008
- Tongue
- English
- Weight
- 181 KB
- Volume
- 77
- Category
- Article
- ISSN
- 1098-0121
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📜 SIMILAR VOLUMES
In this work we have calculated the hydrostatic pressure and the electric field effect on the selfpolarization (SP) in GaAs/Ga 1 À x Al x As quantum well. The binding energies of donors and the selfpolarization in quantum wells are investigated with a variational method considering the influence of
We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined e