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Effects of hydrogen atoms on the electronic structure and transport properties of silicon monatomic chains

✍ Scribed by Xin Shen; Shimin Hou; Zekan Qian; Xingyu Zhao; Jinlei Wu


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
689 KB
Volume
41
Category
Article
ISSN
1386-9477

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Silicon capped by thermal oxide has been implanted with 1 β€’ 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality a