✦ LIBER ✦

Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures

✍ Scribed by P. W. Yu; C. E. Stutz

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

0.8-eV photoluminescence of GaAs grown b

✍ Yu, P. W.; Robinson, G. D.; Sizelove, J. R.; Stutz, C. E. 📂 Article 📅 1994 🏛 The American Physical Society 🌐 English ⚖ 302 KB

Photoluminescence excitation of the Asi

✍ P.W. Yu; C.E. Stutz 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 327 KB

Effects of heat treatment on sharp-line

✍ Yu, P. W.; Talwar, Devki N.; Stutz, C. E. 📂 Article 📅 1993 🏛 American Institute of Physics 🌐 English ⚖ 677 KB

Effect of arsenic precipitates on Fermi

✍ Chen, Y. H.; Wang, Z. G.; Yang, Z. 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 292 KB

Auto-doping of Ga in ZnSe/GaAs layers gr

✍ Minoru Yoneta; Hiroshi Saito; Masakazu Ohishi 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 294 KB

Effect of the annealing temperature on t

✍ Andreev, B. A.; Sobolev, N. A.; Denisov, D. V.; Shek, E. I. 📂 Article 📅 2013 🏛 Springer 🌐 English ⚖ 146 KB