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Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature

✍ Scribed by Chen, Y. H.; Wang, Z. G.; Yang, Z.


Book ID
118179368
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
292 KB
Volume
87
Category
Article
ISSN
0021-8979

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