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Effects of grain-boundary trapping-state energy distribution on the activation energy of resistivity of polycrystalline-silicon films

✍ Scribed by Chih-Yuan Lu; Nicky Chau-Chun Lu; Chi-Shun Wang

Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
302 KB
Volume
27
Category
Article
ISSN
0038-1101

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Evaluation of trap states at front and back oxide interfaces and grain boundaries using electrical characteristic analysis and device simulation of polycrystalline silicon thin-film transistors
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## Abstract The trap states at the front and back oxide interfaces and grain boundaries of polycrystalline silicon thin‐film transistors are evaluated by using electrical characteristic analysis and device simulation. First, the method for extracting the trap densities of the front and back oxide i