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Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes

โœ Scribed by Chang, S.J.; Su, Y.K.; Chen, J.F.; Wen, L.F.; Huang, B.R.

Book ID
114455877
Publisher
The Institution of Electrical Engineers
Year
2001
Tongue
English
Weight
431 KB
Volume
148
Category
Article
ISSN
1350-2433

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๐Ÿ“œ SIMILAR VOLUMES

Effective mass in the barriers of GaAs/A
Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodes
โœ D. Landheer; G.C. Aers; Z.R. Wasilewski ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 496 KB

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu