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Effects of defects generated in ALD TiO2films on electrical properties and interfacial reaction in TiO2/SiO2/Si system upon annealing in vacuum

✍ Scribed by Sanghee Won; Seunghee Go; Wonhee Lee; Kyunghoon Jeong; Hyunsuk Jung; Chongmu Lee; Eungu Lee; Jaegab Lee

No coin nor oath required. For personal study only.

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