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Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy

โœ Scribed by R. Zhang; S.F. Yoon; K.H. Tan; Z.Z. Sun; Q.F. Huang

Book ID
108165654
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
301 KB
Volume
262
Category
Article
ISSN
0022-0248

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The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi