Effects of B2O3and SiO2on dielectric properties and reliability of a lead-based relaxor dielectric ceramic

✍ Scribed by Hideyuki Kanai; Osamu Furukawa; Shin-Ichi Nakamura; Yohachi Yamashita

• Book ID: 104738687
• Publisher: Springer
• Year: 1996
• Tongue: English
• Weight: 940 KB
• Volume: 31
• Category: Article
• ISSN: 0022-2461
• DOI: 10.1007/bf00357871

✦ Synopsis

The effects of B203 and SiO2 which are major constituents of vitreous low-firing agents on the dieleCtric properties and reliability of ceramic dielectrics were elucidated for the case of the lead-based relaxor dielectric ceramic [(Pbo.875Bao.125)

Boron oxide (B203) led to a decrease in dielectric constant and degraded reliability under a humidity load condition at 85~ and 95% RH. Although SiO2 also caused a decrease in dielectric constant, it did not result in a reliability degradation. Analysis of the microstructure using TEM and STEM revealed that a water-soluble secondary phase consisting of B203 and PbO was present at the grain boundaries and triple points in specimens with added B203. In contrast, no secondary phase existed in SiO2-doped specimens, but Si segregated at the grain boundaries. The existence of a water-soluble grain boundary phase was shown to degrade lifetime under humidity load conditions.