Effects of annealing temperature and oxygen partial pressure on the magnetoresistivity ofc-axis oriented La0.9Sr0.1MnO3+δthin film

✍ Scribed by Xu, M. ;Shi, Z. ;Xu, Z.

• Book ID: 105363954
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 282 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622527

✦ Synopsis

Abstract

Using the sol–gel spin‐coating method, c‐axis oriented La~0.9~Sr~0.1~MnO~3+δ~ thin film has been prepared. The excess oxygen δ values and Mn^4+^ proportions in La~0.9~Sr~0.1~MnO~3+δ~ thin films with different annealing temperatures and oxygen partial pressures have been determined from the defect model. For La~0.9~Sr~0.1~MnO~3+δ~ thin film, the oxygen reduction at 1073 K in 1 Pa O~2~ is enough to obtain samples without excess oxygen. The electrical and magnetic measurements reveal that the resistivity peak temperature T~P~ is almost equal to the ferromagnetic transition temperature T~C~. The experimental results indicate that T~C~ cannot be solely determined by the Mn^4+^ proportion. Probably, Mn and La site (especially Mn site) vacancies play another important role in determining T~C~. The excess oxygen δ in those thin films should be taken into account in investigating the magnetotransport behavior. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)