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Effects of annealing on the electric noise in semiconductor lasers

✍ Scribed by Yingxue Shi; Jing Li; Guijun Hu; Sumei Zhang; Xuedan Wang; Jiawei Shi

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
415 KB
Volume
44
Category
Article
ISSN
0026-2714

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✦ Synopsis

Thirty high-power quantum well semiconductor lasers of 808 nm wavelengths are aged at 18 Β± 2 Β°C and 0.5 A. By measuring the variety of device noise before and after aging, it is found that the noise decreases after aging for 100 and 1000 h; moreover, the noise decreasing range of the failed device after aging is obviously higher than that of the good device. In addition, the noise characteristics of the failure device have some change, and the g-r noise occurs after aging. The investigation shows that it is due to the different behavior of the different kinds of defects during annealing.

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