Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

✍ Scribed by Polyakov, A.Y.; Smirnov, N.B.; Ha, Min-Woo; Hahn, Cheol-Koo; Kozhukhova, E.A.; Govorkov, A.V.; Ryzhuk, R.V.; Kargin, N.I.; Cho, Han-Su; Lee, In-Hwan

• Book ID: 120384775
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 867 KB
• Volume: 575
• Category: Article
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2013.04.020