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Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

✍ Scribed by P. Normand; E. Kapetanakis; P. Dimitrakis; D. Skarlatos; D. Tsoukalas; K. Beltsios; A. Claverie; G. Benassayag; C. Bonafos; M. Carrada; N. Cherkashin; V. Soncini; A. Agarwal; Ch. Sohl; M. Ameen

Book ID: 114155564
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 177 KB
Volume: 67-68
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(03)00124-2

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