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Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

✍ Scribed by Xu, H. Y.; Guo, Y. N.; Wang, Y.; Zou, J.; Kang, J. H.; Gao, Q.; Tan, H. H.; Jagadish, C.

Book ID: 120508873
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 868 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3248372

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