Shunt resistance Rsh values greater than 5 ร 10 6 ~-~ have been measured for high efficiency silicon solar cells fabricated by a low temperature diffusion technique, whereas lower values ((0.5 -1.0) ร l0 s ~2) were obtained for ion-implanted solar cells. A degradation in Rsh values by an order of ma
Effects of 1 MeV-electron irradiation on a-Si solar cells
โ Scribed by L.Q. Li; G.Q. Pan; H.W. Diao; X.B. Liao; Z.P. You
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 218 KB
- Volume
- 34
- Category
- Article
- ISSN
- 0927-0248
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