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Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

✍ Scribed by Haigui Yang; Masatoshi Iyota; Shogo Ikeura; Dong Wang; Hiroshi Nakashima

Book ID: 108271853
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 738 KB
Volume: 60
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.01.031

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