A model for abrupt double heterojunction
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Antonio J. GarcΓa-Loureiro; Juan M. LΓ³pez-GonzΓ‘lez
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Article
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2004
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John Wiley and Sons
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English
β 178 KB
## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account FermiβDirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction