Effective attenuation lengths for photoelectrons in thin films of silicon oxynitride and hafnium oxynitride on silicon
β Scribed by C. J. Powell; W. S. M. Werner; W. Smekal; G. Tasneem
- Book ID
- 118213351
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 571 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0142-2421
- DOI
- 10.1002/sia.5103
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We have measured effective attenuation lengths (EALs) of 140-1100 eV electrons in ultrathin silicon dioxide layers using synchrotron radiation. These EALs were generally smaller than those reported previously, although there was agreement with the values measured by Hochella and Carim (Surf. Sci. Le
The effective attenuation lengths (EALs) of photoelectrons in thin silicon dioxide films on an Si(100) substrate were measured as a function of electron energy using synchrotron radiation as an energy-tunable excitation source. The ratios of EALs to inelastic mean free paths (IMFPs) calculated from