Effect ofp-njunction overheating on degradation of silicon high-power pulsed IMPATT diodes

✍ Scribed by A. E. Belyaev; V. V. Basanets; N. S. Boltovets; A. V. Zorenko; L. M. Kapitanchuk; V. P. Kladko; R. V. Konakova; N. V. Kolesnik; T. V. Korostinskaya; T. V. Kritskaya; Ya. Ya. Kudryk; A. V. Kuchuk; V. V. Milenin; A. B. Ataubaeva

• Book ID: 111444853
• Publisher: Springer
• Year: 2011
• Tongue: English
• Weight: 927 KB
• Volume: 45
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782611020047