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Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

✍ Scribed by H.M. Menkara; B.K. Wagner; C.J. Summers


Book ID
108028506
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
440 KB
Volume
6
Category
Article
ISSN
0925-3467

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The influence of Si doping on the photoluminescence (PL) properties of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P multiple-quantum-wells (MQWs) was studied. For the samples without p-type layers, the PL peak wavelength from (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P MQWs did not vary when Si w