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Effect of UV annealing of radiation damage in SiO2 films

✍ Scribed by I.P. Lisovskii; V.G. Litovchenko; V.B. Lozinskii

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
295 KB
Volume
86
Category
Article
ISSN
0169-4332

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Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)