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Effect of total reaction pressure on electrical properties of boron doped homoepitaxial (100) diamond films formed by microwave plasma-assisted chemical vapor deposition using trimethylboron

✍ Scribed by Tsubota, T; Fukui, T; Kameta, M; Saito, T; Kusakabe, K; Morooka, S; Maeda, H

No coin nor oath required. For personal study only.

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