Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

✍ Scribed by Chung-Hsun Jang; Sheu, J.K.; Tsai, C.M.; Shei, S.C.; Lai, W.C.; Chang, S.J.

• Book ID: 119804663
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 288 KB
• Volume: 20
• Category: Article
• ISSN: 1041-1135
• DOI: 10.1109/lpt.2008.924886