Effect of thermal annealing on minority-carrier lifetimes in multicrystalline Si wafers
β Scribed by M. Mimura; S. Ishikawa; T. Saitoh
- Book ID
- 108472177
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 110 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0927-0248
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π SIMILAR VOLUMES
The problem of electron capture by impurities is mathematically similar to that of the absorption of thermal neutrons in a pile. This problem has been treated in detail; for example, Elements of Nuclear Reactor Theory by Glasstoe and Edlund, p. 266.
In n-type silicon the recombination strength of most metallic impurities is neatly smaller than in p-type, due to asymmetric capture cross-sections of these impurities for charge carriers. That is true for several impurities (Fe, Ni, Co, Al) but not for Cr. In this paper we try to demonstrate that C