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Effect of the Te/Si ratio on the electrical characteristics of the amorphous chalcogenide switches

✍ Scribed by M. H. El-Fouly; A. M. Morsy; A. H. Ammar; A. F. Maged; H. H. Amer

Publisher
Springer
Year
1989
Tongue
English
Weight
433 KB
Volume
24
Category
Article
ISSN
0022-2461

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The effect of Te isoelectronic substitut
The effect of Te isoelectronic substitution on the electrical and optical properties of the Geβ€”Sβ€”Se amorphous chalcogenide system studied in thin films
✍ K Sedeek; EA Mahmoud; A Said; AM Nassar πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 311 KB

The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.