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Effect of the electron temperature on the gate-induced charge in small size mos transistors

โœ Scribed by J.P. Leburton; G. Dorda

Book ID
107856667
Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
376 KB
Volume
26
Category
Article
ISSN
0038-1101

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In this study, we report on the dependence of the charge carrier mobility l on the organic semiconductor thickness in organic field-effect transistors (OFETs) fabricated in top-gate architecture on flexible and transparent plastic foils as substrates with regio-regular poly-(3-hexylthiophene) (rr-P3