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Effect of the electrochemical modification of a thin Ga(In)As cap layer on the energy spectrum of InAs/GaAs quantum dots

✍ Scribed by I. A. Karpovich; A. V. Zdoroveishchev; S. V. Tikhov; P. B. Demina; O. E. Khapugin


Book ID
110140908
Publisher
Springer
Year
2005
Tongue
English
Weight
57 KB
Volume
39
Category
Article
ISSN
1063-7826

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Self-assembled InAs/(In,Ga)As quantum dots were embedded into n-or p-type Schottky diodes to investigate the conduction and valence band states, respectively. The samples were prepared by molecular beam epitaxy, and capacitance-voltage (C(V)) spectroscopy as well as photoluminescence (PL) measuremen