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Effect of the discharging and recharging of the stress generated oxide charge in metal–oxide–semiconductor capacitors on the low field leakage current

✍ Scribed by A Meinertzhagen; C Petit; G Yard; M Jourdain; F Mondon


Book ID
108362206
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
264 KB
Volume
38
Category
Article
ISSN
0026-2714

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