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Effect of the concentration gradient of indium on the diffusion of antimony in germanium

✍ Scribed by V. A. Uskov; E. V. Kuril'chik

Book ID
112435365
Publisher
Springer
Year
1972
Tongue
English
Weight
214 KB
Volume
15
Category
Article
ISSN
1573-9228

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## Diffusivities of antimony and indium have been measured in specially deformed germanium specimens. The diffusivity of antimony has been measured (1) parallel to a high density array of parallel edge dislocations, (2) perpendicular to this array, and (3) in low dislocation, non-deformed material.

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lhe effect of phosphorus background concentration on the di]]i4sion of tin, arsenic and antimony in silicon has been studied for phosphorus concentrations between about 9x 10 ~' ~ and 5 x 10 :Β° cm-~, corresponding to 10 <-n/n i <-60. 7he effectiw, difJ'usion coefficients are found to be proportional