✦ LIBER ✦

Effect of the 0.94, 1.0, 1.2, and 1.3 ev radiative centres on the intrinsic luminescence intensity in n-GaAs

✍ Scribed by Glinchuk, K. D. ;Prokhorovich, A. V.

Publisher: John Wiley and Sons
Year: 1977
Tongue: English
Weight: 613 KB
Volume: 44
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2210440248

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The scheme of electronic transitions via

The scheme of electronic transitions via 0.94, 1.0, 1.2, and 1.3 eV radiative centres in n-GaAs

✍ Glinchuk, K. D. ;Prokhorovich, A. V. ;Rodionov, V. E. ;Vovnenko, V. I. 📂 Article 📅 1977 🏛 John Wiley and Sons 🌐 English ⚖ 668 KB

The 0.94, 1.01, and 1.29 eV luminescence

The 0.94, 1.01, and 1.29 eV luminescence bands in laser-excited n-GaAs

✍ Glinchuk, K. D. ;Linnik, L. F. ;Rodionov, V. E. 📂 Article 📅 1973 🏛 John Wiley and Sons 🌐 English ⚖ 199 KB

Effect of heat treatment on the 0.93, 1.

Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAs

✍ Vorobkalo, F. M. ;Glinchuk, K. D. ;Prokhorovich, A. V. ;John, G. 📂 Article 📅 1973 🏛 John Wiley and Sons 🌐 English ⚖ 425 KB

1032. Effect of heat treatment on the 0.

1032. Effect of heat treatment on the 0.93, 1.0 and 1.25 eV luminescence bands in n-GaAs: F M Vorobkalo et al, Phys Stat Sol (a), 15 (1), 1973, 287–293

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 156 KB

Effect of aggregation on the radiative (

Effect of aggregation on the radiative (T1 → S0) and nonradiative (T1⇝S0 and S1⇝T1) transitions in xanthene dyes

✍ N.B. Joshi; D.D. Pant 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 298 KB

The effect of In/N ratio on the optical

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures

✍ R. Potter; S. Mazzucato; N. Balkan; M.J. Adams; P.R. Chalker; T.B. Joyce; T.J. B 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 416 KB

We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga x In 1-x As 1-y N y /GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 µm can be