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Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress

✍ Scribed by Kim, Jong In; Cho, In-Tak; Joe, Sung-Min; Jeong, Chan-Yong; Lee, Daeun; Kwon, Hyuck-In; Jin, Sung Hun; Lee, Jong-Ho

Book ID: 121680692
Publisher: IEEE
Year: 2014
Tongue: English
Weight: 681 KB
Volume: 35
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2014.2306818

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