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Effect of surface composition on the growth rates of silicon carbide by CVD

โœ Scribed by Tsutomu Kaneto; Takashi Okuno; Isao Kabe


Book ID
107790713
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
218 KB
Volume
108
Category
Article
ISSN
0022-0248

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A comprehensive experimental investigation of the effects of hydrogen chloride concentration on the deposition rate and stoichiometry of SiC films produced through thermal decomposition of methyltrichlorosilane (MTS, CH 3 SiCl 3 ) is carried out in a gravimetric hot wall reactor of tubular geometry.