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Effect of substrate material on the rate of growth and the optical parameters ofa-C:H layers

✍ Scribed by T. K. Zvonareva; L. V. Sharonova

Book ID
110120112
Publisher
Springer
Year
1999
Tongue
English
Weight
93 KB
Volume
33
Category
Article
ISSN
1063-7826

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Epitaxial 3C-SiC(1 1 1) films were grown on 6H-SiC(0 0 0 1) Si face on axis substrates by chemical vapor deposition under H 2 , SiH 4 and C 3 H 8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700 β€’ C) with various C/Si ratio and deposition time. It was found that under co