A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900ยฐC resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i
โฆ LIBER โฆ
Effect of silicon surface states on the properties of epitaxial Al2O3 films
โ Scribed by S.W. Whangbo; Y.K. Choi; W.S. Koh; K.B. Chung; H.K. Jang; C.N. Whang
- Book ID
- 117226647
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 690 KB
- Volume
- 398-399
- Category
- Article
- ISSN
- 0040-6090
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