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Effect of SiC wafer miscut angle on the morphology and Hall mobility of epitaxially grown graphene

✍ Scribed by Dimitrakopoulos, Christos; Grill, Alfred; McArdle, Timothy J.; Liu, Zihong; Wisnieff, Robert; Antoniadis, Dimitri A.


Book ID
120238990
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
881 KB
Volume
98
Category
Article
ISSN
0003-6951

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