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Effect of rf power on the structure and related gap states in hydrogenated amorphous silicon

โœ Scribed by Suvarna Babras; S.V. Rajarshi; R.O. Dusane; V.G. Bhide; S.T. Kshirsagar

Book ID
115987384
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
348 KB
Volume
119
Category
Article
ISSN
0022-3093

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Photo-induced changes in the bulk densit
Photo-induced changes in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect
โœ J.David Cohen; David V. Lang; James P. Harbison; A.M. Sergent ๐Ÿ“‚ Article ๐Ÿ“… 1983 ๐Ÿ› Elsevier Science โš– 752 KB

We observe a reversible photo-induced modification in the bulk density of gap states in hydrogenated amorphous silicon associated with the Staebler-Wronski effect. Detailed analysis of deep level transient spectroscopy, admittance and thermally stimulated capacitance measurements indicates that as a