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Effect of rapid thermal annealing on the properties of thin dielectric films of gadolinium, titanium, and erbium oxides on the silicon carbide surface

โœ Scribed by Yu. Yu. Bacherikov; N. L. Dmitruk; R. V. Konakova; O. S. Kondratenko; O. S. Lytvyn; V. V. Milenin; O. B. Okhrimenko; L. M. Kapitanchuk; A. M. Svetlichnyi; V. V. Polyakov; A. A. Shelcunov


Book ID
111447876
Publisher
Springer
Year
2007
Tongue
English
Weight
267 KB
Volume
52
Category
Article
ISSN
1063-7842

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HfO 2 thin films have been deposited on Si substrate by radio frequency reactive magnetron sputtering. The optical and structural properties of HfO 2 thin films in relation to rapid thermal annealing (RTA) temperatures are investigated by spectroscopic ellipsometry (SE), X-ray diffraction (XRD) and