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Effect of Proton Bombardment on the Dark Current of GaAs MSM Structures

✍ Scribed by Hrubčín, L. ;Šafránková, J. ;Hudek, P.

Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
176 KB
Volume
133
Category
Article
ISSN
0031-8965

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Effect of AlN film thickness on photo/da
Effect of AlN film thickness on photo/dark currents of MSM UV photodetector
✍ Ru-Yuan Yang; Chin-Min Hsiung; Hsuan-Hsu Chen; Hung-Wei Wu; Ming-Chang Shih 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 378 KB

## Abstract In this article, we have successfully fabricated the metal‐semi‐conductor‐metal (MSM) UV photodetector using the aluminum nitride‐based (AlN) film as an active layer grown on p‐type Si (100) by a dc sputtering deposition. Effect of AlN thickness of 500, 1500, and 2500 nm on the surface