Effect of pressure on the electrical resistivity of the dense Kondo compound Ce(In0.8Sn0.2)3
β Scribed by G. Oomi; T. Numata; J. Sakurai
- Book ID
- 107997278
- Publisher
- Elsevier Science
- Year
- 1988
- Weight
- 296 KB
- Volume
- 149
- Category
- Article
- ISSN
- 0378-4363
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π SIMILAR VOLUMES
The electrical resistivity p(T) of CePtSi 2 has been measured up to 20 kbar. It is found that two maxima exist in p(T) at ambient pressure but merge into a broad peak above 10 kbar. The thermal expansion coefficient a(T) is also measured at ambient pressure. A large enhancement in a/T is observed at
Thermal expansion coefficients of CeNio.aPto. 2 and Ceo.aYo.2Ni0.aPto.2 polycrystalline samples have been measured up to 19 kbar in the temperature range from 7 to 250 K. The evolution of these coefficients with pressure is analysed and interpreted as a consequence of the increasing hybridization of