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Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures

✍ Scribed by I.V. Altukhov; E.G. Chirkova; V.P. Sinis; M.S. Kagan; R.T. Troeger; S.K. Ray; J. Kolodzey; A.A. Prokofiev; M.A. Odnoblyudov; I.N. Yassievich

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 248 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.09.219

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