Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate

✍ Scribed by Hock Jin Quah; Kuan Yew Cheong; Hassan, Z.; Lockman, Z.

• Book ID: 114620250
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 654 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2087024