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Effect of plasma treatment on interface property of BCN/GaN structure

โœ Scribed by Yoshiaki Shimada; Kentaro Chikamatsu; Chiharu Kimura; Hidemitsu Aoki; Takashi Sugino


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
199 KB
Volume
253
Category
Article
ISSN
0169-4332

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Effect of H+ implantation on the structu
โœ M. Senthil Kumar; R. Kesavamoorthy; J. Kumar ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 180 KB

High-resolution X-ray diffraction and Raman scattering techniques have been used to analyse the impact of multiple energy hydrogen implantation with energy ranging from 40 to 120 keV on the structural properties of metal organic chemical vapour deposition grown unintentionally doped n-type Gallium N