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Effect of planar doping in Co/SiO2–Ni/Cu/Co structures

✍ Scribed by H Wang; Y.X Xia; Q.Y Jin; F.M Li

Book ID: 114224526
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 66 KB
Volume: 226-230
Category: Article
ISSN: 0304-8853
DOI: 10.1016/s0304-8853(01)00101-9

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## Abstract NiO/Co/Cu/Co/Cu spin valves with a doped nano‐nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/