Doping effects of a nano-nitride layer at the interfaces of a NiO/Co/Cu/Co/Cu structure

✍ Scribed by Zhao, Z. C. ;Wang, H. ;Xiao, S. Q. ;Zhong, X. X. ;Gu, Y. Z. ;Xia, Y. X. ;Jin, Q. Y. ;Wu, X. S.

• Book ID: 105363466
• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 201 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521423

✦ Synopsis

Abstract

NiO/Co/Cu/Co/Cu spin valves with a doped nano‐nitride layer (NNL) at different interfaces have been investigated. The positions of the NNL have a significant influence on magnetoresistance (MR). When the NNL is doped at the top interface with the resulting structure of NiO/Co/Cu/Co/NNL/Cu, the MR is higher than that of the non‐doped structure, while MR becomes relatively small when the NNL is doped at the bottom interface between NiO and Co. A detailed analysis is given. This study might be considered as useful for furthering understanding of how to tailor MR with NNLs. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)