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Effect of periodic interruption of the atmospheric-pressure MOVPE growth of InAs/GaAs quantum dots on their morphology and optoelectronic spectra

โœ Scribed by A. V. Zdoroveishchev; P. B. Demina; B. N. Zvonkov


Book ID
111450263
Publisher
SP MAIK Nauka/Interperiodica
Year
2009
Tongue
English
Weight
196 KB
Volume
35
Category
Article
ISSN
1063-7850

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We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 ร€ x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 ร€ x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized