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Effect of oxygen pressure on electrical transport properties for (110) oriented La2/3Sr1/3MnO3 films directly deposited on silicon

✍ Scribed by LI, Tingxian; LI, Kuoshe; YU, Dunbo; ZHANG, Feipeng; ZHANG, Ming; YU, Fengjun


Book ID
123108986
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
956 KB
Volume
31
Category
Article
ISSN
1002-0721

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✍ Xu, M. ;Shi, Z. ;Xu, Z. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 282 KB

## Abstract Using the sol–gel spin‐coating method, __c__‐axis oriented La~0.9~Sr~0.1~MnO~3+__Ξ΄__~ thin film has been prepared. The excess oxygen __Ξ΄__ values and Mn^4+^ proportions in La~0.9~Sr~0.1~MnO~3+__Ξ΄__~ thin films with different annealing temperatures and oxygen partial pressures have bee