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Effect of oxygen pressure on electrical properties of Ge-doped ZnO thin films grown by using pulsed laser deposition

✍ Scribed by D. J. Kim, M. H. Lee, J. S. Park, D. Do, W. Lee, M. H. Kim, T. K. Song, H. I. Choi, K. W. Jang, W. J. Kim


Book ID
119937274
Publisher
The Korean Physical Society
Year
2012
Tongue
English
Weight
293 KB
Volume
61
Category
Article
ISSN
0374-4884

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Transparent conductive dysprosium doped ZnO (Dy:ZnO) thin films with preferential orientation in the (0 0 0 2) direction were deposited on (0 0 0 1) sapphire substrate by buffer assisted pulsed laser deposition. The experimental results show that the resistivity of Dy:ZnO thin films decreased to a m