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Effect of oxygen on photoluminescence properties of a-Si:C:O:H film

✍ Scribed by Hiroshi Ito; Yoshito Kawakyu; Toyoki Higuchi; Kyozoh Ide

Book ID
118332428
Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
161 KB
Volume
59-60
Category
Article
ISSN
0022-3093

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πŸ“œ SIMILAR VOLUMES

On photoluminescence properties of a-Si:
On photoluminescence properties of a-Si:H-based structures
✍ R. Brunner; E. Pinčík; H. Kobayashi; M. Kučera; M. Takahashi; J. RusnΓ‘k πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 671 KB

Non-Gaussian photoluminescence peaks observed in a-Si:H-based structures at 6 K are interpreted as a consequence of the presence of different phases in material. Thin films of amorphous silicon deposited on glass substrate have been analyzed. The main aims of the contribution are (i) analysis of nu