Effect of oxygen migration on the oxidation rate of radicals in n-butanol glass at T=90 K
β Scribed by Zapadinskii, E. L. ;Korolev, V. V. ;Bazhin, N. M. ;Tolkachev, V. A.
- Book ID
- 112682587
- Publisher
- Springer
- Year
- 1988
- Tongue
- English
- Weight
- 80 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0133-1736
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π SIMILAR VOLUMES
## Abstract SiC bipolar devices show a degradation under forwardβbiased operation which has been linked with a recombination enhanced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial disloca
Conductance measurements at 25Β°C on dilute solutions of hydrochloric acid in n-butanol and iso-butanol containing small amounts of water are r e? or-ted. The data were analysed with a computer programm for the linearized 1965 theoretical Fuoss-Onsager equation. The equivalent conductance at iMnite d